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BD175

Fairchild Semiconductor
Part Number BD175
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Mar 23, 2005
Detailed Description BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively ...
Datasheet PDF File BD175 PDF File

BD175
BD175

Overview
BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively 1 TO-126 2.
Collector 3.
Base 1.
Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter *Collector-Base Voltage : BD175 : BD177 : BD179 : BD175 : BD177 : BD179 Value 45 60 80 45 60 80 5 3 7 30 150 - 65 ~ 150 Units V V V V V V V A A W °C °C VCEO Collector-Emitter Voltage VEBO IC ICP PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD175 : BD177 : BD179 Collector Cut-off Current : BD175 : BD177 : BD179 Test Condition IC = 100mA, IB = 0 Min.
45 60 80 100 100 100 1 40 15 250 0.
8 1.
3 3 V V MHz Typ.
Max.
Units V V V µA µA µA mA ICBO VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = ...


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