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BC327

Part Number	BC327
Manufacturer	ON Semiconductor
Description	PNP Transistors
Published	Mar 23, 2005
Detailed Description	PNP Epitaxial Silicon Transistor BC327 Features  Switching and Amplifier Applications  Suitable for AF−Driver Stages ...
Datasheet	BC327 PDF File

Overview

PNP Epitaxial Silicon Transistor BC327 Features  Switching and Amplifier Applications  Suitable for AF−Driver Stages and Low−Power Output Stages  Complement to BC337/BC338  These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted.
) Symbol Parameter Value Unit VCES Collector−Emitter Voltage −50 V VCEO Collector−Emitter Voltage −45 V VEBO Emitter−Base Voltage −5 V IC Collector Current (DC) −800 mA TJ Junction Temperature 150 C TSTG Storage Temperature −55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage...

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