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74HCT04D

Toshiba
Part Number 74HCT04D
Manufacturer Toshiba
Description Hex Inverter
Published Jul 3, 2018
Detailed Description CMOS Digital Integrated Circuits Silicon Monolithic 74HCT04D 74HCT04D 1. Functional Description • Hex Inverter 2. Gene...
Datasheet PDF File 74HCT04D PDF File

74HCT04D
74HCT04D

Overview
CMOS Digital Integrated Circuits Silicon Monolithic 74HCT04D 74HCT04D 1.
Functional Description • Hex Inverter 2.
General The 74HCT04D is a high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS.
The inputs are compatible with TTL, NMOS and CMOS output voltage levels.
The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3.
Features (1) Wide operating temperature range: Topr = -40 to 125 � (Note 1) (2) High speed: tpd = 8 ns (typ.
) at VCC = 5 V (3) Low power dissipation: ICC = 1.
0 µA (max) at Ta = 25 � (4) Compatible with TTL outputs: VIH = 2.
0 V (min) : VIL = 0.
8 V (max) (5) Wide interfacing ability: LSTTL, NMOS, CMOS (6) Balanced propagation delays: tPLH ≈ tPHL Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020.
4.
Packaging SOIC14 ©2016-2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2020-07 2020-11-17 Rev.
3.
0 5.
Pin Assignment 6.
Marking 7.
IEC Logic Symbol 74HCT04D ©2016-2020 2 Toshiba Electronic Devices & Storage Corporation 2020-11-17 Rev.
3.
0 8.
Truth Table 74HCT04D A Y L H H L 9.
Absolute Maximum Ratings (Note) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.
5 to 7.
0 V Input voltage VIN -0.
5 to VCC + 0.
5 V Output voltage Input diode current Output diode current Output current VCC/ground current VOUT IIK IOK IOUT ICC -0.
5 to VCC + 0.
5 V ±20 mA ±20 mA ±25 mA ±50 mA Power dissipation Storage temperature PD (Note 1) 500 mW Tstg -65 to 150 � Note: Exceeding any of the absolute maximum ratings, ev...


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