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3N158A

ETC
Part Number 3N158A
Manufacturer ETC
Description P-channel Transistor
Published Jul 11, 2018
Detailed Description 157,A3N (SILICON) 3N158,A P-channel silicon nitride passivated MOS field-effect enhancement mode transistors designed f...
Datasheet PDF File 3N158A PDF File

3N158A
3N158A

Overview
157,A3N (SILICON) 3N158,A P-channel silicon nitride passivated MOS field-effect enhancement mode transistors designed for chopper and switching application.
CASE 20 (T0-72) G2 I0 STYlE 2 PIN 1.
SOURCE 2.
GATE o0 0 3 3.
ORAIN 4.
SUBSTRATE AND CASE LEAD MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Dissipation @ TA =25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS ID PD TJ Tstg 3N157 3N157A 3N158 3N158A Unit 35 50 Vdc 35 50 Vdc 50 Vdc 30 mAdc 300 1.
7 -65 to +175 mW mW/"C °c -65 to +200 °c HANDLING PRECAUTIONS: MOS field·effect transistors have extremely high input resistance.
They can be damaged by the accumulation of excess static charge.
Avoid possible damage to the devices while handling, testing, or in actual operation, by following the procedures outlined below: 1.
To avoid the build-up of static charge, the leads of the devices should rem...


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