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BC856AW

Part Number	BC856AW
Manufacturer	Infineon Technologies AG
Description	PNP Silicon AF Transistors
Published	Mar 23, 2005
Detailed Description	BC856W...BC860W PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low coll...
Datasheet	BC856AW PDF File

Overview

BC856W.
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BC860W PNP Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: 3 BC846W, BC847W, BC848W BC849W, BC850W (NPN) 2 1 VSO05561 Type BC856AW BC856BW BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW BC859AW BC859BW BC859CW BC860BW BC860CW Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 1 Dec-11-2001 BC856W.
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BC860W Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 124 °C Junction temperature Storage temperature Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC856W BC857W BC858W Unit BC860W BC859W 65 80 80 5 45 50 50 5 100 200 200 200 250 150 -65 .
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150 mW °C 30 30 30 5 mA mA V Thermal Resistance Junction - soldering point 1) RthJS 105 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC856W BC857/860W BC858/859W Symbol min.
V(BR)CEO Values typ.
max.
Unit V 65 45 30 - Collector-base breakdown voltage IC = 10 µA, IE = 0 BC856W BC857/860W BC858/859W V(BR)CBO 80 50 30 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Dec-11-2001 BC856W.
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BC860W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol Values Parameter min.
DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC856W BC857/860W BC858/859W Unit max.
V typ.
V(BR)CES 80 50 30 V(BR)EBO ICBO ICBO...

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