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2N5644

Part Number	2N5644
Manufacturer	ETC
Description	NPN SILICON RF POWER TRANSISTOR
Published	Jul 12, 2018
Detailed Description	2NS644 (SILICON) NPN SILICON RF POWER TRANSISTOR ... designed for 12.5 Volt, UHF large signal amplifier applications re...
Datasheet	2N5644 PDF File

Overview

2NS644 (SILICON) NPN SILICON RF POWER TRANSISTOR .
.
.
designed for 12.
5 Volt, UHF large signal amplifier applications reo quired in industrial and consumerFMequipmentoperating to520 MHz.
• Low lead inductance stripline package for ease of design and in· creased broadband capability • Balanced Emitter Construction to protect against device damage due to load mismatch • Specified 12.
5 Volt, 470 MHz Characteristics Output Power = 1.
0 Watt Minimum Gain = 7.
0 dB Efficiency = 60% 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Oissipation@Tc=25oC Derate above 25°C Operating and Storage Junction Temperature Range Symbol Vceo VCB Ve8 I~ Po TJ,T,tg Value 18 36 4.
0 0.
25 3.
5 0.
02 -65 to +200 Unit Vde Vde Vde Ade Watts W/oe °c 'ELECTRICAL CHARACTERISTICS (Te =250 e unless otherwise noted) Characteristic I Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note') IIc=50...

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