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2N5646

Part Number	2N5646
Manufacturer	ETC
Description	NPN SILICON RF POWER TRANSISTOR
Published	Jul 12, 2018
Detailed Description	2N5646 (SILICON) NPN SILICON RF POWER TRANSISTOR · .. designed for 12.5 Volt, UHF large signal amplifier applications ...
Datasheet	2N5646 PDF File

Overview

2N5646 (SILICON) NPN SILICON RF POWER TRANSISTOR · .
.
designed for 12.
5 Volt, UHF large signal amplifier applications required in industrial and consumerFMequipmentoperating to520 MHz.
• Low lead inductance stripline package for ease of design and in· creased broadband capability • Balanced Emitter Construction to protect against device damage due to load mismatch • Specified 12.
5 Volt, 470 MHz Characteristics- Output Power =12 Watt Minimum Gain =4.
7 dB Efficiency =60% -MAXIMUM RATINGS Rating Coliector·Emitter Voltage Symbol VCEO Value 18 Collector·8818 Voltage Emitter·Base Voltage VC8 VE8 36 4.
0 Collector Current - Continuous IC 2.
0 Total Device Dissipation@Tc=250 C Derate above 2SoC Po 30 0.
171 Unit Vde Vde Vde Ade watts wfDc Operating and Storage Junction Temperature Range TJ,Tstg -65 to +200 °c -ELECTRICAL CHARACTERISTICS (TC = 250 C unless otherwise noted) I I I I ICharacteristic Symbol Min Max Unit OFF CHARACTERISTICS Colleetor·Emitter Brea...

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