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2N5670

Part Number	2N5670
Manufacturer	ETC
Description	SILICON N-CHANNEL JUNCTION FET
Published	Jul 12, 2018
Detailed Description	2N5668 (SILICON) 2N5669 2N5670 SILICON N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode (TypeA) Junction Fiel...
Datasheet	2N5670 PDF File

Overview

2N5668 (SILICON) 2N5669 2N5670 SILICON N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode (TypeA) Junction Field-EffectTransistors designed for VHF amplifier and mixer applications.
• Low Cross Modulation and Intermodulation Distortion • Drain and Source Interchangeable • Low 100-MHz Noise Figure - NF = 2.
5 dB (Max) • Low Reverse Transfer and Input Capcitances- Crss = 1.
0 pF (Typ); Ciss =4.
7 pF (Typ) • High Maximum Stable Gain Due to Drain and Gate Lead Separation N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS (Type A) *MAXIMUM RATINGS Rating Drain-Source Voltage ·Drain-Gate Voltage *Reverse Gate-SOu~ce Voltage ·Forward Gate Current Drain Current *Total Device Dissipation@TA = 250 C Derate above 2SoC ·Storage Temperature Range Svmbol VOS VOG VGSR IGF 10 Po '" Tstg III Value 25 25 25 10 20 310 2.
82 -65 to +150 Unit Vde Vdc Vdc mAde mAde mW mW/oC °c -Indicates JEDEC Registered Data.
(11 Continuous package improvements have enhanced these guaranteed Maximum ...

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