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2N5327

Part Number	2N5327
Manufacturer	ETC
Description	Medium-power NPN silicon transistors
Published	Jul 14, 2018
Detailed Description	2N5336 (SILICON) thru 2N5339 Medium-power NPN silicon transistors designed for switching and wide band amplifier applic...
Datasheet	2N5327 PDF File

Overview

2N5336 (SILICON) thru 2N5339 Medium-power NPN silicon transistors designed for switching and wide band amplifier applications.
CASE 79 (TO·39) 02 1 00 STYLE 1: 3 PIN 1.
EMITTER 2.
BASE 3.
COLLECTOR MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating.
and Storage Junction Temperature Range VCEO VCB VEB IC IB PD TJ' Tstg THERMAL CHARACTERISTICS Characteristic Symb91 Thermal ReSistance, Junction to Case () JC 2N5336 2N5337 80 2N5338 2N5339 100 80 100 6.
0 5.
0 1.
0 6.
0 34.
3 -65 to +200 Unit Vdc Vdc Vdc Adc Adc Watts mWrC ...

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