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2N5346

Part Number	2N5346
Manufacturer	ETC
Description	MEDIUM-POWER NPN SILICON TRANSISTORS
Published	Jul 14, 2018
Detailed Description	53462N (SILICON) thru 2N5349 MEDIUM-POWER NPN SILICON TRANSISTORS · .. designed for switching and wide-band amplifier a...
Datasheet	2N5346 PDF File

Overview

53462N (SILICON) thru 2N5349 MEDIUM-POWER NPN SILICON TRANSISTORS · .
.
designed for switching and wide-band amplifier applications.
• Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.
2 Vdc (Max) @ IC = 7.
0 Adc • DC Current Gain Specified to 5 Amperes • Excellent Safe Operating Area • Packaged in the Compact, High Dissipation TO-59 Case • Isolated Collector Configuration 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base CUrrent Total Device Dissipation@ TC = 25'C Derate above 25°C Operating and storage Junction Temperature Range Symbol VCEO VCB VEB IC IB PD TJ• Tstg 2NS346 2NS347 80 2NS348 2NS349 100 80 100 6.
0 7.
0 1.
0 60 343 -65 to +200 Unit Vdc Vdc Vdc Adc Adc Watts mW/'C 'c THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Max 2.
91 -Indicates 'JEDEC Registered Data FIGURE 1 - POWER-TEMPERATURE DERATING CURVE 60 <>>«--n-- 50 lO z 40 :;0=: 3...

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