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2N5360

Part Number	2N5360
Manufacturer	ETC
Description	Silicon N-channel junction field-effect transistors
Published	Jul 14, 2018
Detailed Description	2N5358 (SILICON) thru 2N5364 Silicon N-channel junction field-effect transistors depletion mode (Type A) devices design...
Datasheet	2N5360 PDF File

Overview

2N5358 (SILICON) thru 2N5364 Silicon N-channel junction field-effect transistors depletion mode (Type A) devices designed primarily for general-purpose amplifier applications.
CASE 20 (TO-72) 102 3 4 STYLE 3 PIN 1.
2.
3.
4.
DRAIN SOURCE GATE CASE LEAD MAXIMUM RATINGS Rating Forward Gate Current Reverse Gate-Source Voltage Drain-Gate Voltage Total Device Dissipation @TA =25° C Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol IG(f) VGS(r) VDG PD Tstg TJ Value Unit 10 mAdc 40 Vdc 40 Vdc 300 2.
0 -65 to +200 mW mW/oC °c -65 to +175 °c ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherWise noted) Characteristic OFF CHARACTERISTICS Gate-Source...

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