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2N5635

ETC
Part Number 2N5635
Manufacturer ETC
Description NPN SILICON RF POWER TRANSISTORS
Published Jul 14, 2018
Detailed Description 2N5635 (SILICON) 2N5636 2N5637 NPN SILICON RF POWER TRANSISTORS · .. designed for VHF/UHF amplifier applications. Thes...
Datasheet PDF File 2N5635 PDF File

2N5635
2N5635


Overview
2N5635 (SILICON) 2N5636 2N5637 NPN SILICON RF POWER TRANSISTORS · .
.
designed for VHF/UHF amplifier applications.
These devices are suitable for use in 28 volt systems to 470 MHz.
These transistors are ideal for 225·400 MHz communications equipment.
• Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch.
• Low inductance strip line packaging for easier and better broad· band designs.
• Ceramic Package • Choice of Power Levels at 400 MHz.
28 Vdc 2N5635 - 2.
5 Watts - 6.
2 dB (Min) Gain 2N5636 - 7.
5 Watts - 5.
7 dB (Min) Gain 2N5637 - 20 Watts - 4.
6 dB (Min) Gain *MAXIMUM RATINGS Rating Collector-Emitter Voltage Coliector·Ba.
.
Voltage Emitter-Base Voltage Collector Current Total Device DissipationflllTC =250 C Derate above 25°C Operating and Storage Junction Temperatura Range -Indicatel JEOEC Registered Oate.
Symbol VCEO VCB VEB IC Po TJ.
Tstg 2N5636i 2N5636i 2N1i637 35...



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