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2N5219

Part Number	2N5219
Manufacturer	ETC
Description	NPN SILICON ANNULAR TRANSISTOR
Published	Jul 14, 2018
Detailed Description	2N5219 (SILICON) NPN SILICON ANNULAR TRANSISTOR · .. designed for general-purpose amplifier applications. • Low Collect...
Datasheet	2N5219 PDF File

Overview

2N5219 (SILICON) NPN SILICON ANNULAR TRANSISTOR · .
.
designed for general-purpose amplifier applications.
• Low Collector-Emitter Saturation Voltage VCE(sat): 0.
4 Vdc (Max) @ IC: 10 mAde • High Current-Gain-Bandwidth Product fT: 150 MHz (Min) @ IC: 10 mAde • Low Collector-Base Capacitance Ccb: 4.
0 pF (Max)@ VCE: 10 Vdc NPN SILICON AMPLIFIER TRANSISTOR *MAXIMUM RATINGS Rating Coliector~Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Callector Current - Continuous Total Power Dissipation @ T A = 25°C Derate above 2SoC Total Power Dissipation @ TC == 2SoC Derate above 2SoC Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC Po Po TJ,Tstg Value 15 20 3.
0 100 ...

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