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2N5227

ETC
Part Number 2N5227
Manufacturer ETC
Description PNP SILICON ANNULAR TRANSISTOR
Published Jul 14, 2018
Detailed Description 2NS227 (SILICON) PNP SILICON ANNULAR TRANSISTOR ... designed for general·purpose amplifier applications. • Current Gain...
Datasheet PDF File 2N5227 PDF File

2N5227
2N5227

Overview
2NS227 (SILICON) PNP SILICON ANNULAR TRANSISTOR .
.
.
designed for general·purpose amplifier applications.
• Current Gain Specified at 100 IlAdc and 2.
0 mAde • Low Collector· Emitter Saturation Voltage - VCE(sat) = 0.
4 Vdc (Max) @ IC = 10 mAde • Collector· Base Capacitance - Ccb = 5.
0 pF (Max) @ VCB = 10 Vdc PNP SILICON AMPLIFIER TRANSISTOR "MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ T A "" 2SoC Derate above 2SoC Total Power Dissipation @ TC =- 2SoC Derate above 2SoC Operating and Storage Junction Temperature Range Symbol VCEO VCS VES IC Po Po TJ,Tstg Value 30 30 3.
0 50 350 2.
8 1.
0 8...


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