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1N5785

Part Number	1N5785
Manufacturer	ETC
Description	PNPN 4-LAYER DIODES
Published	Jul 15, 2018
Detailed Description	1N5158 thru 1N5160 1N5779 thru 1N5793 PNPN 4-LAYER DIODES · .. two terminal, fast·switching devices specifically design...
Datasheet	1N5785 PDF File

Overview

1N5158 thru 1N5160 1N5779 thru 1N5793 PNPN 4-LAYER DIODES · .
.
two terminal, fast·switching devices specifically designed for low voltage applications such as logic circuits, pu Ise generators, memory and relay drivers, relay replacements, alarm circuits, multivibrators, ring counters, and telephone switching circuits.
These devices feature: • Low Breakover (Switching) Voltage - 10 to 15·Volt Ratings • Fast Switching Speeds - ton = 75 ns (Typ) toff = 250 ns (Typ) • Low Junction Capacitance - 45 pF (Typ) • Low Breakover Currents • Subminiature Glass Package MAXIMUM RATINGS ITA =250 C unless olherwise'noledl Rating 'It Reverse Voltage lN5158, lN5782, lN5788 1N5159, 1N5783, 1N5789 1N5160, 1N5784, 1N5790 1N5779, 1N5785, 1N5791 lN5780,1N5786,1N5792 1N5781, 1N5787, 1N5793 ·Continuous Forward Current *Steady State Power Dissipation @TA = 500C Derate above 5O"c *Peak Pulse Current (50 j,ts maximum pulse Width) ·Operating Junction Temperature Range Storage Temperature Ra...

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