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S1376

Toshiba
Part Number S1376
Manufacturer Toshiba
Description NPN Transistor
Published Jul 16, 2018
Detailed Description S1376 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATION...
Datasheet PDF File S1376 PDF File

S1376
S1376

Overview
S1376 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AMPLIFIER APPLICATIONS, FEATURES .
Complementary to S1375 Unit in mm 9.
9MAX.
03.
2±O.
2 W- -$ a.
m 0.
6 6 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL v CBO VCEO Vebo ic IB ?C TJ T stg RATING -80 -80 -5 -750 -500 1.
5 150 -55-150 UNIT V V V mA mA W °C °C Tr-rp; 4* ',3- ,9, 9 MAX.
1.
EMITTER 2.
BASE 3- COLLECTOR (HEAT SINK) JEDEC TOSHIBA Weight : 1.
4g ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SYMBOL TEST...


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