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2SD1355

Toshiba
Part Number 2SD1355
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Jul 16, 2018
Detailed Description : SILICON NPN TRIPLE DIFFUSED TYPE ) POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES . High Breakdown Voltage : VC...
Datasheet PDF File 2SD1355 PDF File

2SD1355
2SD1355

Overview
: SILICON NPN TRIPLE DIFFUSED TYPE ) POWER AMPLIFIER APPLICATIONS.
Unit in mm FEATURES .
High Breakdown Voltage : VCEO=100V .
Low Collector Saturation Voltage : Vqj? (sat)=2.
0Vttlax.
.
Complementary to 2SB995 .
Recommended for 30W High Fidelity Audicd Frequency Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VcEO VeBO ic IB PC T J T stg RATING 100 100 5 5 0.
5 40 UNIT V V V A A W 150 -55^150 °C °C 10/3 MAX 7.
0 03.
2 i 0.
2 ~g" r~* / '1 *

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