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2SD1362

Toshiba
Part Number 2SD1362
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Jul 16, 2018
Detailed Description : 2SD1362 m SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm ...
Datasheet PDF File 2SD1362 PDF File

2SD1362
2SD1362

Overview
: 2SD1362 m SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS.
FEATURES .
High Collector Current : Ic=7A .
Low Saturation Voltage : VcE(sat)=0.
5V(Max.
) .
High Collector Power Dissipation : Pc=40W (at Tc=25°C) .
Complementary to 2SB992 (at Ic=4A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VcBO VcEO VeBO ic RATING 100 80 UNIT V 10.
3MAX, 7.
0 03.
2±O.
2 1/ r~ y & i.
to c5 X < s to a w -H o o IS iri ji T1 | .
1.
2 a 1.
4 + 0.
25 0.
76-0.
15 2.
54 ±02^ \ 1 ,_ 2.
54 ±0.
25 iOO +1 ,i !! c3 €Hi=!: Base Curr...


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