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2SD1407

Part Number	2SD1407
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Jul 16, 2018
Detailed Description	:) SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : Vqeo=100V . Low C...
Datasheet	2SD1407 PDF File

Overview

:) SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS.
FEATURES .
High Breakdown Voltage : Vqeo=100V .
Low Collector Saturation Voltage : VcE(sat) =2 - 0V(Max.
.
Complementary to 2SB1016 .
Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm 10.
3MAX.
j#3.
2±0.
2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO VEBO ic IB stg RATING 100 100 0.
5 30 150 -55~150 UNIT 1.
BASE 2.
COLLECTOR 3.
EMITTER JEDEC EIAJ TOSHIBA 2-10L1A Weight : 2.
1g ELECTRICAL ...

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