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2SD1409

Toshiba
Part Number 2SD1409
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Jul 16, 2018
Detailed Description : SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATUR...
Datasheet PDF File 2SD1409 PDF File

2SD1409
2SD1409

Overview
: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES .
High DC Current Gain : hFE=600(Min.
) ( V CE=2V, I C=2A) .
Monolithic Construction with Built-in 3ase-Emitter Shunt Resistor.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO RATING 600 400 UNIT V V INDUSTRIAL APPLICATIONS Unit in mm 10.
3MAX.
7.
0 03.
2±O.
2 / J-r~ J wJrf rt C5 H o r-' to 1 * 1.
4 ,1 + 0.
25 Q76-ai5 1.
2 z M S ::: N Emitter-Base Voltage VEBO 5 Collector Current ic 6 Base Current Collector Power Dissipation u Ta=25 C u Tc=25 C IB pC 1 2.
0 25 Junction Temperature Ti 150 Storage Temperature Range Tstg -55-150 EQUIVALENT CIRCUIT BAS Ki k.
i i —W> ELECTRICAL CHARACTERISTICS (Ta=25°C) o COLLECTOR i I' ; i Yfr- i emitter V A A W °C °C 2.
54±0.
25 mo dd +1 2.
54±0.
25 s< ID r .
1 12 2 1.
BASE 2.
COLLECTOR 3.
EMITTER | JEDEC EIAJ TOSHIBA We ight : 2.
lg - 2-10...


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