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2SD1410

Part Number	2SD1410
Manufacturer	Toshiba
Description	NPN Transistor
Published	Jul 16, 2018
Detailed Description	2SD1410 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. ...
Datasheet	2SD1410 PDF File

Overview

2SD1410 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES .
High DC Current Gain : hFE=2000(Min.
) (Vce=2V, Ic=2A) INDUSTRIAL APPLICATIONS Unit in mm 10.
3MAX.
03.
2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temperature Range EQUIVALENT CIRCUIT BASE o- I lyvv SYMBOL RATING VCBO 300 VcEO 250 Vebo 5 ic 6 IB PC T J T stg 1 2.
0 25 150 -55-150 COLLECTOR UNIT V V V A A W °C °C 1 1.
BASE 2.
COLLECTOR 3.
EMITTER TOSHIBA 2-10L1A ...

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