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2SD1411

Part Number	2SD1411
Manufacturer	Toshiba
Description	NPN Transistor
Published	Jul 16, 2018
Detailed Description	: 2SD1411 SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURE...
Datasheet	2SD1411 PDF File

Overview

: 2SD1411 SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
FEATURES .
Low Saturation Voltage : vCE(sat)=0.
5V(Max.
) .
Complementary to 2SB1018 at I C=4A Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCEO VEBO ic 80 Base Current Collector Power Dissipation Ta=25 C Tc=25 C IB 2.
0 30 1.
BASE 2.
COLLECTOR 3 EMITTER Junction Temperature 150 Storage Temperature Range T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL -55-150 TOSHIBA 2-10L1A Weight : 2.
1g TEST CONDITION MIN.
TYP.
MAX...

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