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2SC3299

Part Number 2SC3299
Manufacturer Toshiba
Title Silicon NPN Transistor
Description :h SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm FEATURES . Low Collector Saturation Voltage : VcE(s...
Features . Low Collector Saturation Voltage : VcE(sat)=0.4V(Max.) at Ic=3A , High Speed Switching Time : t st g=l . 0/is(Typ . ) 10.3MAX. —70 03.2±O.2 r 1/ / i A\ei j X s rfl -H o r-' . Complementary to 2SA1307 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Volt...

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2SC3292 : Ordering number:EN1332A NPN Planar Type Silicon Darlington Transistor 2SC3292 For General-Purpose Drivers Applications · Especially suited for use in switching of L load motor driver, printer hammer driver, relay driver, etc. Features · High DC current gain. · Large current capacity and wide ASO. · Contains 60±10V Zener diode between collector and base. · Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. · 15mJ reverse energy rating. Package Dimensions unit:mm 2010C [2SC3292] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage C.

2SC3293 : Ordering number:EN1333C NPN Planar Silicon Darlington Transistor 2SC3293 Driver Applications Applications · Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). Package Dimensions unit:mm 2010C Features · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 60±10V between collector and base. · Uniformity in collector-to-base breakdown voltage due to the adoption of an accurate impurity diffusion process. · High inductive load handling capability. Specifications [2SC3293] JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage .

2SC3294 : Ordering number:EN1422C NPN Planar Silicon Transistor 2SC3294 Driver Applications Applications · Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). Package Dimensions unit:mm 2010C Features · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 60±10V between collector and base. · Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. · High inductive load handling capability. Specifications [2SC3294] JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitt.

2SC3295 : 2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Switching Applications · · · · High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Small package Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 150 125 -55~125 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA TO-236MOD SC-59 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = 25°C) Char.

2SC3295 : SMD Type Silicon NPN Epitaxial 2SC3295 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High collector current: IC = 150 mA (max). Small package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characterist.

2SC3296 : ·With TO-220Fa package ·Wide area of safe operation ·Complement to type 2SA1304 APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 1.5 0.5 2 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 u.

2SC3296 : ·Collector-Emitter Breakdown Voltage- : V = B(BR)CEOB 150V(Min) ·Complement to Type 2SA1304 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation TAPPLICATIONST ·Power amplifier applications. ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(TBaB=25℃) SYMBOL PARAMETER VALUE UNIT V CBO B B Collector-Base Voltage 150 V V CEO B B Collector-Emitter Voltage 150 V V EBO B B Emitter-Base Voltage 5 V I CB B Collector Current-Continuous 1.5 A I BB B Base Current-Continuous Collector Power Dissipation @TBaB=25℃ P CB B Collector Power Dissipation @TBCB=25℃ T JB B Junction Temperature 0.5 A 2 W 20 150 ℃ T stg B B Storage Te.

2SC3297 : :. SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES . Good Linearity of fpg . Complementary to 2SA1305 and 5W Output Applications 10.3 MAX Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO v EBO RATING 30 30 IB PC L stg 0.3 15 150 -55~150 UNIT 1. BASE 2. COLECTOR 3. EMITTER TOSHIBA 2-10L1A Weight : 2.1g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current Emitte.

2SC3297 : ·With TO-220Fa package ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 30 30 5 3 15 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown.

2SC3297 : ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1305 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Car radio, car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3297 isc website: www..

2SC3298 : : 2SC3298 2SC3298A 2SC3298B ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Transition Frequency : fT=100MHz (Typ . . Complementary to 2SA1306, 2SA1306A, 2SA1306B Unit in mm 1Q3MAX. 7.0 0Z. 2± 0.2 / /r\r '-ra J s d :.: X < oL +i s to MAXIMUM RATINGS CHARACTERISTIC Collector-Base Voltage 2SC3298 2SC3298A 2SC3298B Collector-Emitter Voltage 2SC3298 2SC3298A 2SC3298B Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB Tstg RATING 160 180 200 160 180 200 UNIT 1.5 0.15 20 15.

2SC3298 : ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B ·Complement to Type 2SA1306/A/B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SC3298 160 V 2SC3298A 180 2SC3298B 200 2SC3298 160 VCEO Collector-Emitter Voltage 2SC3298A 180 V 2SC3298B 200 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC.

2SC3298A : : 2SC3298 2SC3298A 2SC3298B ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Transition Frequency : fT=100MHz (Typ . . Complementary to 2SA1306, 2SA1306A, 2SA1306B Unit in mm 1Q3MAX. 7.0 0Z. 2± 0.2 / /r\r '-ra J s d :.: X < oL +i s to MAXIMUM RATINGS CHARACTERISTIC Collector-Base Voltage 2SC3298 2SC3298A 2SC3298B Collector-Emitter Voltage 2SC3298 2SC3298A 2SC3298B Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB Tstg RATING 160 180 200 160 180 200 UNIT 1.5 0.15 20 15.

2SC3298A : ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B ·Complement to Type 2SA1306/A/B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SC3298 160 V 2SC3298A 180 2SC3298B 200 2SC3298 160 VCEO Collector-Emitter Voltage 2SC3298A 180 V 2SC3298B 200 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC.

2SC3298B : .

2SC3298B : .

2SC3298B : ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) ·Complement to Type 2SA1306B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SC3298B 200 V VCEO Collector-Emitter Voltage 2SC3298B 200 V VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 5 V 1.5 A 0.15 A 20 W 150 ℃ -55~150 ℃ 2SC3298B i.




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