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2SC3308

Part Number	2SC3308
Manufacturer	Toshiba
Description	SILICON NPN EPITAXIAL TYPE TRANSISTOR
Published	Jul 17, 2018
Detailed Description	:A SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . Low Collector Saturation Vo...
Datasheet	2SC3308 PDF File

Overview

:A SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES .
Low Collector Saturation Voltage : vCE(sat)=0.
4V(Max.
) at Ic=3A .
High Speed Switching Time : t s tg=l .
0/is(Typ .
) .
Complementary to 2SA1308.
INDUSTRIAL APPLICATIONS Unit in mm 1H3MAX.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO VEBO ic ICP RATING 100 80 PC 30 Tstg 150 -55-150 UNIT 1.
BASE 2.
COLLECTOR (HEAT SINK' 3.
EMITTER °C JEDEC ELECTRICAL CHARACTERISTICS (Ta =25°C) CHARACTERISTIC...

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