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2SC2318

Toshiba
Part Number 2SC2318
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Jul 17, 2018
Detailed Description SILICON NPN EPITAXIAL PLANAR TYPE HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. FEATURES . Wide Band and High Gain for Cl...
Datasheet PDF File 2SC2318 PDF File

2SC2318
2SC2318

Overview
SILICON NPN EPITAXIAL PLANAR TYPE HIGH POWER AMPLIFIER FOR CATV APPLICATIONS.
FEATURES .
Wide Band and High Gain for Class A Amplifier.
Unit Ln mm 09.
39MAX.
_ £*8.
45MAX * X .
All Electrodes Insulated from Case.
MAXIMUM RATINGS (Ta=25 °C) 00.
4:5 1 I1 05.
08 .
«5 •z, 3 o 05 ^ \ CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) SYMBOL VcBO VCEO Vebo ic pc Junction Temperature Storage Temperature Range TJ T stg RATING 40 15 3.
5 350 3.
5 175 -65-175 UNIT V V V mA W °C °C :?'-' j\ \\kL / 45°\ yk,r.
\* / 1.
2.
3.
4.
EMITTER BASE COLLECTOR CASE JEDEC EIA J TOSHIBA TO-33 TC-5 TB-i 4B , 2-8D1A...


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