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2SB1016

Toshiba
Part Number 2SB1016
Manufacturer Toshiba
Description SILICON PNP TRANSISTOR
Published Jul 17, 2018
Detailed Description : SILICON PNP TRIPLE DIFFUSED TYPE — POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : V^g =-10...
Datasheet PDF File 2SB1016 PDF File

2SB1016
2SB1016

Overview
: SILICON PNP TRIPLE DIFFUSED TYPE — POWER AMPLIFIER APPLICATIONS.
FEATURES .
High Breakdown Voltage : V^g =-100V (3 .
Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.
0V(Max.
) .
Complementary to 2SD1407 .
Recommended for 30W High-Fid elity Audio Frequency Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO Vebo ic IB PC T j T stg RATING -100 -100 -5 -5 -0.
5 30 150 -55-150 UNIT V V V A A W °C °C Unit in mm 10.
3MAX 7.
0 03.
2±O.
2 /.
l~T"~l 13J k ! r ...


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