DatasheetsPDF.com

2SB1034

Toshiba
Part Number 2SB1034
Manufacturer Toshiba
Description SILICON PNP TRANSISTOR
Published Jul 17, 2018
Detailed Description SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) 2SB1 034 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICA...
Datasheet PDF File 2SB1034 PDF File

2SB1034
2SB1034

Overview
SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) 2SB1 034 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.
SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm 7.
9 MAX.
FEATURES .
High DC Current Gain : hFE=2000(Min.
) (VCE=-2V, Ic=-1A) .
Low Saturation Voltage : V CE ( sa t)=-1.
5V(Max.
) (I C=-1A, IB=-lmA) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO -80 V VCEO -80 V Emitter-Base Voltage VEBO -8 V Collector Current ic -2 A Base Current IB -0.
5 A Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT PC 15 Ti Tstg 150 -55-150 COLLECTOR W °C °C 1.
EMITTER 2.
COLLECTOR (HEAT SINK) 3.
BASE EIAJ TOSHIBA TO-121 2-8F1A ELECTRICAL CHARACTERISTICS (Ta=25°C) 6 emitter Mounting Kit No.
AC46C Weight : 0.
72g CHARACTERISTIC SYMBOL TEST CONDITION MIN.
TYP.
MAX.
UNIT Collector Cut-off Current Emitter Cut-off Current Col...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)