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2SA1184

Toshiba
Part Number 2SA1184
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Jul 17, 2018
Detailed Description SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS FEATURES : . Complementary to 2SC...
Datasheet PDF File 2SA1184 PDF File

2SA1184
2SA1184

Overview
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS FEATURES : .
Complementary to 2SC2824.
.
Suitable for driver of 60 to 80 watts.
.
High breakdown voltage.
Unit in mm 7.
9 MAX.
-| 03.
1±O.
15 MAXIMUM RATINGS (Ta=25°C; CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current IB Collector Power Dissipation Ta=25°C Tc=25°C PC Junction Temperature Storage Temperature Range stg RATING -120 -120 UNIT -1 -100 mA 15 150 -55-150 °C CO 2.
3 u 2.
3 2 "S IX "- 1 N 1.
EMITTER 2.
COLLECTOR (HEAT SINK) 3.
BASE TO— 186 TOSHIBA 2-8F1A Mounting Kit No.
AC46C Weight : 0.
72g ELECTRICAL CHARACTERISTICS (Ta=25°C CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current !CB0 lEBO VCB=-120V, IE =0 VEB=-5V, I C =0 Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Satur...


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