DatasheetsPDF.com

2SA1195

Toshiba
Part Number 2SA1195
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Jul 17, 2018
Detailed Description : SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT A...
Datasheet PDF File 2SA1195 PDF File

2SA1195
2SA1195

Overview
: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS.
COLOR TV CLASS B SOUND OUTPUT APPLICATIONS.
FEATURES .
Large Collector Current and Collector Power Dissipation Capability.
(Pc=2.
0W at Ta=25°C) .
Designed for Complementary Use with 2SC2483.
Unit in mm 9.
9UAX.
0a2±O.
2 , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25 C Tc=25 C Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC PC Tstg RATING -160 -160 -1.
5 -1.
0 2.
0 15 175 -55 -150 UNIT 1.
BASE 2.
COLLECTOR (FIN) a EMITTER TOSHIBA 2-10F1B Weight : 1.
37g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain iCBO lEBO hFE(l) (Note) V CB=-150V, I E=0 V EB =-6V, I C=0 VCE=-5V, Ic=-200mA Collector-Emitter Saturation Voltage hFE(2) VC E=-5V...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)