DatasheetsPDF.com

MGS908 Datasheet PDF


Part Number MGS908
Manufacturer Aeroflex
Title GaAs Schottky Diodes
Description The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz....
Features
• Fourteen different configurations
• Beam lead, Flip Chip or packaged devices
• Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature DC Power Dissipation Soldering Temperatu...

File Size 707.25KB
Datasheet MGS908 PDF File








Similar Ai Datasheet

MGS901 : The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Features • Fourteen different configurations • Beam lead, Flip Chip or packaged devices • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature DC Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength, Min Rating Rated VBR 50 mA -65 ºC to +150 ºC -65 ºC to +150 ºC 75 mW per junction at TA = 25 ºC, derate linearly to zero at TA = +150 ºC +260 ºC for 5 sec per JEDEC J-STD-20C 6 grams Revision Date:Revis.

MGS901 : The MGS series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Rev. V1 Beam Lead Electrical Characteristics, TA = +25°C Model Configuration MGS901 Single Junction MGS902 Anti-parallel Pair MGS903 Series Tee MGS904 4 Junction Ring-Quad MGS905 4 Junction Bridge-Quad MGS906 4 Junction Series-Tee MGS907 8 Junction Ring-Quad MGS907A 8 Junction Ring-Quad MGS907B 8 Junction Ring-Quad MGS908 8 Junction Quad MGS909 6 Junction Series-Tee MGS910 12 Junction Ring-Quad MGS911 12 Junction Bridge-Quad MGS912 Four Junction Test Conditions VF mV Min. 650 650 650 650 650 1300 1300 1300 1300 1300 1800 1800 1800 2500 Max. 750 750 750 750 75.

MGS902 : The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Features • Fourteen different configurations • Beam lead, Flip Chip or packaged devices • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature DC Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength, Min Rating Rated VBR 50 mA -65 ºC to +150 ºC -65 ºC to +150 ºC 75 mW per junction at TA = 25 ºC, derate linearly to zero at TA = +150 ºC +260 ºC for 5 sec per JEDEC J-STD-20C 6 grams Revision Date:Revis.

MGS902 : The MGS series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Rev. V1 Beam Lead Electrical Characteristics, TA = +25°C Model Configuration MGS901 Single Junction MGS902 Anti-parallel Pair MGS903 Series Tee MGS904 4 Junction Ring-Quad MGS905 4 Junction Bridge-Quad MGS906 4 Junction Series-Tee MGS907 8 Junction Ring-Quad MGS907A 8 Junction Ring-Quad MGS907B 8 Junction Ring-Quad MGS908 8 Junction Quad MGS909 6 Junction Series-Tee MGS910 12 Junction Ring-Quad MGS911 12 Junction Bridge-Quad MGS912 Four Junction Test Conditions VF mV Min. 650 650 650 650 650 1300 1300 1300 1300 1300 1800 1800 1800 2500 Max. 750 750 750 750 75.

MGS903 : The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Features • Fourteen different configurations • Beam lead, Flip Chip or packaged devices • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature DC Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength, Min Rating Rated VBR 50 mA -65 ºC to +150 ºC -65 ºC to +150 ºC 75 mW per junction at TA = 25 ºC, derate linearly to zero at TA = +150 ºC +260 ºC for 5 sec per JEDEC J-STD-20C 6 grams Revision Date:Revis.

MGS903 : The MGS series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Rev. V1 Beam Lead Electrical Characteristics, TA = +25°C Model Configuration MGS901 Single Junction MGS902 Anti-parallel Pair MGS903 Series Tee MGS904 4 Junction Ring-Quad MGS905 4 Junction Bridge-Quad MGS906 4 Junction Series-Tee MGS907 8 Junction Ring-Quad MGS907A 8 Junction Ring-Quad MGS907B 8 Junction Ring-Quad MGS908 8 Junction Quad MGS909 6 Junction Series-Tee MGS910 12 Junction Ring-Quad MGS911 12 Junction Bridge-Quad MGS912 Four Junction Test Conditions VF mV Min. 650 650 650 650 650 1300 1300 1300 1300 1300 1800 1800 1800 2500 Max. 750 750 750 750 75.

MGS904 : The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Features • Fourteen different configurations • Beam lead, Flip Chip or packaged devices • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature DC Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength, Min Rating Rated VBR 50 mA -65 ºC to +150 ºC -65 ºC to +150 ºC 75 mW per junction at TA = 25 ºC, derate linearly to zero at TA = +150 ºC +260 ºC for 5 sec per JEDEC J-STD-20C 6 grams Revision Date:Revis.

MGS904 : The MGS series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Rev. V1 Beam Lead Electrical Characteristics, TA = +25°C Model Configuration MGS901 Single Junction MGS902 Anti-parallel Pair MGS903 Series Tee MGS904 4 Junction Ring-Quad MGS905 4 Junction Bridge-Quad MGS906 4 Junction Series-Tee MGS907 8 Junction Ring-Quad MGS907A 8 Junction Ring-Quad MGS907B 8 Junction Ring-Quad MGS908 8 Junction Quad MGS909 6 Junction Series-Tee MGS910 12 Junction Ring-Quad MGS911 12 Junction Bridge-Quad MGS912 Four Junction Test Conditions VF mV Min. 650 650 650 650 650 1300 1300 1300 1300 1300 1800 1800 1800 2500 Max. 750 750 750 750 75.

MGS905 : The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Features • Fourteen different configurations • Beam lead, Flip Chip or packaged devices • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature DC Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength, Min Rating Rated VBR 50 mA -65 ºC to +150 ºC -65 ºC to +150 ºC 75 mW per junction at TA = 25 ºC, derate linearly to zero at TA = +150 ºC +260 ºC for 5 sec per JEDEC J-STD-20C 6 grams Revision Date:Revis.

MGS905 : The MGS series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Rev. V1 Beam Lead Electrical Characteristics, TA = +25°C Model Configuration MGS901 Single Junction MGS902 Anti-parallel Pair MGS903 Series Tee MGS904 4 Junction Ring-Quad MGS905 4 Junction Bridge-Quad MGS906 4 Junction Series-Tee MGS907 8 Junction Ring-Quad MGS907A 8 Junction Ring-Quad MGS907B 8 Junction Ring-Quad MGS908 8 Junction Quad MGS909 6 Junction Series-Tee MGS910 12 Junction Ring-Quad MGS911 12 Junction Bridge-Quad MGS912 Four Junction Test Conditions VF mV Min. 650 650 650 650 650 1300 1300 1300 1300 1300 1800 1800 1800 2500 Max. 750 750 750 750 75.

MGS906 : The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Features • Fourteen different configurations • Beam lead, Flip Chip or packaged devices • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature DC Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength, Min Rating Rated VBR 50 mA -65 ºC to +150 ºC -65 ºC to +150 ºC 75 mW per junction at TA = 25 ºC, derate linearly to zero at TA = +150 ºC +260 ºC for 5 sec per JEDEC J-STD-20C 6 grams Revision Date:Revis.

MGS906 : The MGS series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Rev. V1 Beam Lead Electrical Characteristics, TA = +25°C Model Configuration MGS901 Single Junction MGS902 Anti-parallel Pair MGS903 Series Tee MGS904 4 Junction Ring-Quad MGS905 4 Junction Bridge-Quad MGS906 4 Junction Series-Tee MGS907 8 Junction Ring-Quad MGS907A 8 Junction Ring-Quad MGS907B 8 Junction Ring-Quad MGS908 8 Junction Quad MGS909 6 Junction Series-Tee MGS910 12 Junction Ring-Quad MGS911 12 Junction Bridge-Quad MGS912 Four Junction Test Conditions VF mV Min. 650 650 650 650 650 1300 1300 1300 1300 1300 1800 1800 1800 2500 Max. 750 750 750 750 75.

MGS907 : The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Features • Fourteen different configurations • Beam lead, Flip Chip or packaged devices • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature DC Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength, Min Rating Rated VBR 50 mA -65 ºC to +150 ºC -65 ºC to +150 ºC 75 mW per junction at TA = 25 ºC, derate linearly to zero at TA = +150 ºC +260 ºC for 5 sec per JEDEC J-STD-20C 6 grams Revision Date:Revis.

MGS907 : The MGS series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Rev. V1 Beam Lead Electrical Characteristics, TA = +25°C Model Configuration MGS901 Single Junction MGS902 Anti-parallel Pair MGS903 Series Tee MGS904 4 Junction Ring-Quad MGS905 4 Junction Bridge-Quad MGS906 4 Junction Series-Tee MGS907 8 Junction Ring-Quad MGS907A 8 Junction Ring-Quad MGS907B 8 Junction Ring-Quad MGS908 8 Junction Quad MGS909 6 Junction Series-Tee MGS910 12 Junction Ring-Quad MGS911 12 Junction Bridge-Quad MGS912 Four Junction Test Conditions VF mV Min. 650 650 650 650 650 1300 1300 1300 1300 1300 1800 1800 1800 2500 Max. 750 750 750 750 75.

MGS907A : The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Features • Fourteen different configurations • Beam lead, Flip Chip or packaged devices • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature DC Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength, Min Rating Rated VBR 50 mA -65 ºC to +150 ºC -65 ºC to +150 ºC 75 mW per junction at TA = 25 ºC, derate linearly to zero at TA = +150 ºC +260 ºC for 5 sec per JEDEC J-STD-20C 6 grams Revision Date:Revis.

MGS907A : The MGS series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Rev. V1 Beam Lead Electrical Characteristics, TA = +25°C Model Configuration MGS901 Single Junction MGS902 Anti-parallel Pair MGS903 Series Tee MGS904 4 Junction Ring-Quad MGS905 4 Junction Bridge-Quad MGS906 4 Junction Series-Tee MGS907 8 Junction Ring-Quad MGS907A 8 Junction Ring-Quad MGS907B 8 Junction Ring-Quad MGS908 8 Junction Quad MGS909 6 Junction Series-Tee MGS910 12 Junction Ring-Quad MGS911 12 Junction Bridge-Quad MGS912 Four Junction Test Conditions VF mV Min. 650 650 650 650 650 1300 1300 1300 1300 1300 1800 1800 1800 2500 Max. 750 750 750 750 75.

MGS907B : The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Features • Fourteen different configurations • Beam lead, Flip Chip or packaged devices • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature DC Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength, Min Rating Rated VBR 50 mA -65 ºC to +150 ºC -65 ºC to +150 ºC 75 mW per junction at TA = 25 ºC, derate linearly to zero at TA = +150 ºC +260 ºC for 5 sec per JEDEC J-STD-20C 6 grams Revision Date:Revis.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)