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D823

Part Number	D823
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Aug 30, 2018
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD823 DESCRIPTION ·Collector Curren...
Datasheet	D823 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD823 DESCRIPTION ·Collector Current: IC= 6A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.
) APPLICATIONS ·Designed for B/W TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 6A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD823 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown V...

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