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D1085

Hitachi
Part Number D1085
Manufacturer Hitachi
Description Silicon NPN Transistor
Published Aug 31, 2018
Detailed Description 2SD1085(K) Silicon NPN Triple Diffused Application High voltage switching, igniter Outline TO-220AB 1 23 1. Base 2. Co...
Datasheet PDF File D1085 PDF File

D1085
D1085


Overview
2SD1085(K) Silicon NPN Triple Diffused Application High voltage switching, igniter Outline TO-220AB 1 23 1.
Base 2.
Collector (Flange) 3.
Emitter 2 1 4.
5 kΩ 250 Ω (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC IC(peak) PC*1 Tj Tstg Rating 300 300 7 3 6 40 150 –55 to +150 Unit V V V A A W °C °C 2SD1085(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to base breakdown V(BR)CBO voltage 300 Collector to emitter sustain voltage VCEO(sus) 300 Emitter to base breakdown voltage V(BR)EBO 7 Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage ICEO hFE VCE(sat) — 500 — Base to emitter saturation voltage VBE(sat) — Turn on time Turn off time Note: 1.
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