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2SA2182

Toshiba
Part Number 2SA2182
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Aug 31, 2018
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Power Amplifier Applications Driver Stage Amplifier Applications ・...
Datasheet PDF File 2SA2182 PDF File

2SA2182
2SA2182


Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 80 MHz (typ.
) 2SA2182 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO − 230 V Collector-emitter voltage VCEO − 230 V Emitter-base voltage VEBO − 5 V Collector current Base current DC pulse IC − 1.
0 A ICP − 2.
0 A IB − 100 mA 1 : BASE 2 : COLLECTOR 3 : EMITTER Ta = 25°C Collector power dissipation Tc = 25°C Junction temperature Storage temperature range PC Tj Tstg 2 20 150 − 55~150 W W °C °C Note: Using continuously under heavy loads (e.
g.
the application of high JEDEC ― JEITA SC-67 TOSHIBA 2-10U1A Weight: 1.
7 g (typ.
) temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating tempe...



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