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IRFD1Z0

Part Number	IRFD1Z0
Manufacturer	Harris Semiconductor
Description	N-Channel MOSFET
Published	Sep 10, 2018
Detailed Description	Semiconductor July 1998 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Powe...
Datasheet	IRFD1Z0 PDF File

Overview

Semiconductor July 1998 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 0.
4A and 0.
5A, 60V and 100V, 2.
4 and 3.
2 Ohm, N-Channel Power MOSFETs Features • 0.
4A and 0.
5A, 60V and 100V • rDS(ON) = 2.
4Ω and 3.
2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Description These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requ...

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