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2N3211

Motorola
Part Number 2N3211
Manufacturer Motorola
Description NPN silicon high frequency switching transistor
Published Nov 6, 2018
Detailed Description 2N3211 (SILICON) CASE 22 (TO-18) NPN silicon high frequency switching transistor designed for high speed, saturated sw...
Datasheet PDF File 2N3211 PDF File

2N3211
2N3211

Overview
2N3211 (SILICON) CASE 22 (TO-18) NPN silicon high frequency switching transistor designed for high speed, saturated switching applications for industrial service.
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector- Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA =25'c Derate above 25 'c Total Device Dissipation @ TC = 25'C Derate above 25'C Operating & Storage Junction Temperature Range Symbol VCEO VCB VEB IC PD PD Value 15 40 6.
0 500 0.
36 2.
06 1.
2 6.
9 Unit Vdc Vdc Vdc mAdc Watt mW/"C Watts mW/'C TJ , Tstg -65 to +200 'c ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sreakdown Voltage (IC =30 mAde, IS =0) Collector-Base Sreakdown Voltage (IC = 10 /lAde, IE =0) (r.
:Emitter-Base Sreakdown Voltage =10 /lAde, IC =0) Collector Cutoff Current (VCE =20 Vde, VES(off) =3.
0 Vde) Base Cutoff Current (VCE =20 Vde, VES(off) =3.
0 Vde) (VCE = 20 Vde, VES(<>ff) =3.
0 Vde, TA =85' C) ...


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