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2N1983

Part Number	2N1983
Manufacturer	Motorola
Description	NPN silicon annular small-signal transistor
Published	Nov 7, 2018
Detailed Description	19832N (SILICON) 2N1984 NPN silicon annular small-signal transistor. CASE 31 (TO·5) Collector connected to cas. MAXIMU...
Datasheet	2N1983 PDF File

Overview

19832N (SILICON) 2N1984 NPN silicon annular small-signal transistor.
CASE 31 (TO·5) Collector connected to cas.
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @TA = 25° C Derate above 25°C Total Device Dissipation@ TC = 25°C Derate above 25° C Operating and Storage Junction Temperature Range Symbol Value Unit VCEO 25 Vdc VCB 50 Vdc VEB 5.
0 Vdc IC 1.
0 Adc PD 0.
6 Watt 4.
8 mW/oC PD 2.
0 Watts 16 mW/oC TJ , T stg -65 to +150 °c THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol 8JC 8JA Max 62.
5 208 Unit °C/W °C/W 2-231 ...

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