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HM4485

H&M Semiconductor
Part Number HM4485
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It ...
Datasheet PDF File HM4485 PDF File

HM4485
HM4485

Overview
Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =-40V,ID =-13A RDS(ON) <15mΩ @ VGS=-10V RDS(ON) <18mΩ @ VGS=-4.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC converter HM4485 Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package HM4485 +0 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power...


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