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HM4487

H&M Semiconductor
Part Number HM4487
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4487 P-Channel Enhancement Mode Power MOSFET Description The HM4487 uses advanced trench technology and design to pro...
Datasheet PDF File HM4487 PDF File

HM4487
HM4487

Overview
HM4487 P-Channel Enhancement Mode Power MOSFET Description The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
D G General Features ● VDS =-100V,ID =-4.
5A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance S Schematic diagram HM4487 Application ● Power management in notebook computer ● Portable equipment and battery powered systems Marking and pin Assignment 100% UIS TESTED! 100% ∆Vds TESTED! SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package HM4487 HM4487 SOP8 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID ...


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