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HM4452

Part Number	HM4452
Manufacturer	H&M Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET
Published	Nov 27, 2018
Detailed Description	HM4452 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to pro...
Datasheet	HM4452 PDF File

Overview

HM4452 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 100V,ID =10A RDS(ON) < 17mΩ @ VGS=10V (Typ:14mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Schematic diagram Application ● DC/DC Primary Side Switch ● Telecom/Server ● Synchronous Rectification Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package +0 +0 S...

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