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HM4488

Part Number	HM4488
Manufacturer	H&M Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET
Published	Nov 27, 2018
Detailed Description	+0 N-Channel Enhancement Mode Power MOSFET Description The HM4488 uses advanced trench technology and design to...
Datasheet	HM4488 PDF File

Overview

+0 N-Channel Enhancement Mode Power MOSFET Description The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =150V,ID =5.
2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ） Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses +0 Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% ΔVds TESTED! SOP-8 top view Package Marking and Ordering Informati...

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