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A1987

Toshiba
Part Number A1987
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Dec 27, 2018
Detailed Description TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications 2SA1987 Unit: mm • High break...
Datasheet PDF File A1987 PDF File

A1987
A1987

Overview
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications 2SA1987 Unit: mm • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO −230 V Collector-emitter voltage V CEO −230 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1.
5 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 180 W Tj 150 °C T stg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Note: Using continuously under heavy loads (e.
g.
the application of high Weight: 9.
75 g (typ.
) temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temper...


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