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20N60D

ROUM
Part Number 20N60D
Manufacturer ROUM
Description 20A 600V N-channel Enhancement Mode Power MOSFET
Published Jan 16, 2019
Detailed Description 20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDM...
Datasheet PDF File 20N60D PDF File

20N60D
20N60D

Overview
20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.
The package form is TO-220F.
Which accords with the RoHS standard.
VDSS = 600V RDS(on) （TYP)= 0.
36Ω ID = 20A 2 Features ● Fast Switching ● Low On Resistance(Rdson≤0.
45Ω) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:20pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Application ● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
TO-220C TO-220F TO-3PN 4 Electrical Characteristics 4.
1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) PARAMETER Maximum Drian-Source DC Voltage Maximum Gate-Drain Voltage Drain Current(continuous) Drain Current(Pulsed)...


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