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STG1

STMicroelectronics
Part Number STG1
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Jan 21, 2019
Detailed Description STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - prod...
Datasheet PDF File STG1 PDF File

STG1
STG1

Overview
STT6N3LLH6 N-channel 30 V, 0.
021 Ω typ.
, 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data 4 5 6 3 2 1 SOT23-6L Features Order code STT6N3LLH6 VDSS RDS(on) max ID PTOT 0.
025 Ω (VGS= 10 V) 30 V 6 A 1.
6 W 0.
036 Ω (VGS= 4.
5 V) • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses Figure 1.
Internal schematic diagram Applications • Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all ...


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