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IRFD1Z1

Part Number	IRFD1Z1
Manufacturer	GE
Description	FIELD EFFECT POWER TRANSISTOR
Published	Feb 10, 2019
Detailed Description	~[R3D~ [F~lr FIELD EFFECT POWER TRANSISTOR IRFD1Z0,1Z1 D82AL29K2 0.5 AMPERES 100, 60 VOLTS RDS(ON) = 2.4 !1 This serie...
Datasheet	IRFD1Z1 PDF File

Overview

~[R3D~ [F~lr FIELD EFFECT POWER TRANSISTOR IRFD1Z0,1Z1 D82AL29K2 0.
5 AMPERES 100, 60 VOLTS RDS(ON) = 2.
4 !1 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEl CASE STYLE 4-PIN DIP...

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