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1N4531

NXP
Part Number 1N4531
Manufacturer NXP
Description High-speed diodes
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supers...
Datasheet PDF File 1N4531 PDF File

1N4531
1N4531

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes FEATURES • Hermetically sealed leaded glass SOD68 (DO-34) package • High switching speed: max.
4 ns • Continuous reverse voltage: max.
75 V • Repetitive peak reverse voltage: max.
75 V • Repetitive peak forward current: max.
450 mA.
APPLICATIONS • High-speed switching • Protection diodes in reed relays.
DESCRIPTION 1N4531; 1N4532 The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages.
k handbook, halfpage a MAM156 The diodes are type branded.
Fig.
1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.
4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj total power dissipation storage temperature junction temperature Tamb = 25 °C − − − − −65 − 4 1 0.
5 500 +200 200 A A A mW °C °C see Fig.
2 CONDITIONS MIN.
− − − − MAX.
75 75 200 450 V V mA mA UNIT 1996 Sep 03 2 Philips Semiconductors Product specification High-speed diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified.
SYMBOL VF IR PARAMETER forward voltage reverse current IN4531 IN4532 Cd diode capacitance IN4531 IN4532 trr reverse recovery time IN4531 IN4532 reverse recovery time IN4532 Vfr forward recovery voltage when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.
7 when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.
7 when switched from IF = 100 mA; tr ≤ 30 ns; see Fig.
8 see Fig.
5 VR = 20 V VR = 20 V;...


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