DatasheetsPDF.com

12N60F

GFD
Part Number 12N60F
Manufacturer GFD
Description 600V N-Channel MOSFET
Published Mar 12, 2019
Detailed Description 600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.Thi...
Datasheet PDF File 12N60F PDF File

12N60F
12N60F

Overview
600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.
This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
12N60/12N60F VDSS RDS(ON) ID 600V 0.
65Ω 12A Features •12A, 600V, RDS(on) = 0.
65Ω @VGS = 10 V • Low gate charge ( typical 52nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 12N60/12N60F TO-220/220F 0GFD www.
goford.
cn TEL：0755-86350980 FAX：0755-86350963 12N60/12N60F Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter 12N60 12N60F VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)