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SS35

ON Semiconductor
Part Number SS35
Manufacturer ON Semiconductor
Description Schottky Rectifier
Published Jun 26, 2019
Detailed Description Schottky Rectifier SS32 - S310 Description The SS32−S310 series includes a high−efficiency, low power loss, general−prop...
Datasheet PDF File SS35 PDF File

SS35
SS35

Overview
Schottky Rectifier SS32 - S310 Description The SS32−S310 series includes a high−efficiency, low power loss, general−propose Schottky rectifiers.
The clipbonded leg structure provides high thermal performance and low electrical resistance.
These rectifiers are suited for free wheeling, secondary rectification, and reverse polarity protection applications.
Features • Metal to Silicon Rectifiers, Majority Carrier Conduction • Low−Forward Voltage Drop • Easy Pick and Place • High−Surge Current Capability • This Device is Pb−Free and Halide Free DATA SHEET www.
onsemi.
com 1 Cathode 2 Anode SMC CASE 403AG MARKING DIAGRAM $Y &Z &3 Sxyz $Y&Z&3 Sxyz G = Logo = Assembly Plant Code = Date Code = Specific Device Code x = S or 3 y = 1 or 3 z = 0 or 2−9 ORDERING INFORMATION Device Package Shipping† SS32 SS33 SS34 SS35 SS36 SS38 SS39 S310 SMC (Pb−Free, Halide−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1999 1 August, 2021 − Rev.
5 Publication Order Number: SS39/D SS32 − S310 ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted.
Value Symbol Parameter SS32 SS33 SS34 SS35 SS36 SS38 SS39 S310 Units VRRM IF(AV) IFSM Maximum Repetitive Reverse Voltage Maximum Average Forward Current at TA = 75°C Non−Repetitive Peak Forward Surge Current: 8.
3 ms Single Half−Sine Wave 20 30 40 50 60 80 90 100 V 3.
0 A 100 A dV/dt Maximum Voltage Rate of Change 10000 V/mS TSTG Storage Temperature Range −55 to +150 °C TJ Operating Junction Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Symbol Parameter PD Power Dissipation RθJA Therma...


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