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1N1190

GeneSiC
Part Number 1N1190
Manufacturer GeneSiC
Description Silicon Standard Recovery Diode
Published Jun 27, 2019
Detailed Description Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive Note...
Datasheet PDF File 1N1190 PDF File

1N1190
1N1190

Overview
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
1N1188 thru 1N1190R VRRM = 400 V - 600 V IF = 35 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N1188 (R) 1N1189 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.
3 ms 400 280 400 35 595 -55 to 150 -55 to 150 500 350 500 35 595 -55 to 150 -55 to 150 1N1190 (R) 600 420 600 35 595 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1188 (R) Diode forward vol...


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