PSMN015-100P Datasheet

PSMN015-100P N-channel MOSFET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction loss.

Features

„ Low conduction losses due to low on-state resistance „ Rated for avalanche ruggedness 1.3 Applications „ DC-to-DC convertors „ Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 75 A; VDS = 80 V; Tj = 25 °C; see Figure 11 Static characteristics RDSon drain-source VGS = 10 V; ID = 25 A; on-state.