DatasheetsPDF.com

BC557B

Multicomp
Part Number BC557B
Manufacturer Multicomp
Description General Purpose Transistor
Published Aug 9, 2019
Detailed Description BC557, 557B General Purpose Transistor Features: • PNP Silicon Planar Epitaxial Transistors. • Especially Suited For use...
Datasheet PDF File BC557B PDF File

BC557B
BC557B


Overview
BC557, 557B General Purpose Transistor Features: • PNP Silicon Planar Epitaxial Transistors.
• Especially Suited For use in Driver Stages of Audio Amplifiers, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing Circuits of Television Receivers.
TO-92 Plastic Package Dimensions A B C D E F G H K Minimum Maximum 4.
32 5.
33 4.
45 5.
20 3.
18 4.
19 0.
41 0.
55 0.
35 0.
50 5° 1.
40 1.
14 1.
53 12.
70 - Dimensions : Millimetres Pin Configuration 1.
Emitter 2.
Base 3.
Collector Page 1 31/05/05 V1.
0 BC557, 557B General Purpose Transistor Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Peak Base Current Peak Emitter Current Peak Power Dissipation at Ta = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCES VCBO VEBO IC ICM IBM IEM PTA Tstg Rating 45 50 5.
0 100 200 200 500 4.
0 -65 to +150 Junction Temperature Thermal Resistance Junction to Ambient Tj Rth(j-a) 150 250 Electrical Characteristics (Ta = 25°C Unless Otherwise Specified) Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO Test Condition IC = 2mA, IB = 0 IC = 100µA.
IE = 0 IE = 100µA, IC = 0 Collector-Cut off Current ICBO ICES VCB = 30V, IE = 0 Tj = 150°C VCB = 30V, IE = 0 VCE = 80V, VBE = 0 Unit V mA mW mW/°C °C °C/W Rating >45 >50 >5.
0 <15 <5.
0 <15 Unit V nA µA nA Collector-Cut off Current DC Current Gain ICES hFE TJ = 125°C VCE = 80V, VBE = 0 IC = 10µA, VCE = 5V IC = 2mA, VCE = 5V IC = 100mA, VCE = 5V BC557B BC557 BC557B BC557B <4.
0 Typical 150 75 - 800 200 - 450 Typical 200 µA - Page 2 31/05/05 V1.
0 BC557, 557B General Purpose Transistor Electrical Characteristics (Ta = 25°C Unless Otherwise Specified) Parameter Symbol Test Condition Collector Emitter Saturation Voltage VCE(Sat) IC = 10mA, IB = 0.
5mA IC = 100mA, IB = 5mA Base Emitter Saturation Voltage VBE(sat) IC = 10mA, IB = ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)